NEW Reactive Magnetron Sputtering Unit
Features
1-The advantages of new reactive magnetron sputtering technology compared to lBD technology:
Lower manufacturing and usage costs, greater production capacity; It can achieve multi target co sputtering, with stronger stress regulation ability and no damage to semiconductor substrates. It can be used for glass or semi-conductor substrates and is widely used.
2-Equipment Characteristics:
Fully automatic program control achieves "one click" completion, using a confocal/vertical sputtering structure, compact structure, comprehensive functions, user-friendly operation interface, stable and reliable, suitable for research and development and production needs.
3-Equipment Composition:
Single/multi workpiece iniection chamber, process chamber, sputtering system, RF ion source auxiliary system, vacuum system, heating/cooling system, gas transmission system, fully automatic program control system,etc.
4-Sputtering Type:
DC pulse reactive sputtering, RF reactive sputtering reactive co sputtering.
5-Application:
Sputtering generates various dielectric materials, such as oxides, nitrides, nitrogen oxides, etc.
6-Model:
YRSⅡ-650, YRSⅡ-750, YRSⅡ-900
Component Characteristics
1-Type of workpiece disc:
Public rotary disc, planetary disc, automatic flipping workpiece disc, temperature control workpiece disc, etc.
2-Sputtering power supply:
Using pulse DC power supply (frequency 40K, 50% -90% adjustable duty cycle) and RF power supply.
3-Stone crystal control:
Does not control the sputtering rate, the sputtering rate is controlled by power, and crystal control only assists in controlling the final deposited film thickness.
4-Radio frequency ion source:
Low energy, no pollution, no damage.
Main Performance Parameters
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Extreme vacuum: better than 5^-7 torr;
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Pumping speed: The pumping time from the atmosphere to 5^-6 torr is less than 40 minutes;
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Heating: The quartz lamp baking chamber removes water vapor, with a maximum temperature of 150℃ and a temperature control accuracy better than ±2℃. Coating uniformity: Within a batch, the uniformity on the fixture is better than ±0.5%;
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Coating repeatability: better than ±0.5%
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Film layer density: High density thin films can be plated, and the film layer isdense without temperature drift. The peak wavelength drift of the single layer film measured using a spectrophotometer or ellipsometer is less than 0.2% (at 80-100℃,water for 1hour)
Film Forming Characteristics
Mainly used for coating high-quality dielectric thin films:
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High membrane density
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Good uniformity
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High purity
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Fewer film defects control
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Low surface roughness
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High precision in film thickness
Installation Requirements:
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